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| AM42-0039 2 Watt C-Band VSAT Power Amplifier 5.9 - 7.1 GHz Features * * * * * * * High Linear Gain: 33 dB Typical High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 25% Typ. 50 Input / Output Broadband Matched Integrated Output Power Detector Lead-Free Bolt Down Ceramic Package RoHS* Compliant and 260C Reflow Compatible Rev. V5 Functional Schematic V DD GND V DD GND Description The AM42-0039 is a three stage MMIC power amplifier in a lead-free, bolt down ceramic package, allowing easy assembly. This device employs a fully matched chip with internally decoupled gate and drain bias networks. The device is designed to operate from a constant current drain supply or a constant voltage gate supply. By varying the bias conditions, the saturated output power performance of this device may be tailored for various applications. The AM42-0039 is ideally suited for use as an output stage or a driver amplifier in VSAT systems. The AM42-0039 includes internal supply line bypassing in the package, minimizing the number of external components required. The AM42-0039 is fabricated using a mature 0.5 micron MBE based GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. RF IN GND RF OUT V DET V GG V GG Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name VDD GND RFIN GND VGG VGG VDET RFOUT GND VDD GND Description Drain Supply DC and RF Ground RF Input DC and RF Ground Gate Supply Gate Supply Output Power Detector RF Output DC and RF Ground Drain Supply DC and RF Ground Ordering Information Part Number AM42-0039 Package CR-15 Ceramic Bolt Down Package Flange * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0039 2 Watt C-Band VSAT Power Amplifier 5.9 - 7.1 GHz Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Output Power vs. Temperature Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance (qJC) Second Harmonic Third Harmonic Detector Voltage Test Conditions PIN = -10 dBm PIN = -10 dBm PIN = -10 dBm PIN = +3 dBm, Ids = 900 mA Typ. PIN = +3 dBm, Ids = 900 mA Typ. (5.9 to 6.4 GHz) PIN = +3 dBm, Ids = 900 mA Typ. (6.4 to 7.1 GHz) TA = -40C to +85C, PIN = +7 dBm PIN = +3 dBm PIN = +3 dBm, Ids = 900 mA Typ. PIN = +3 dBm, Ids = 900 mA Typ. 25C Heat Sink PIN = +3 dBm, Ids = 900 mA Typ. PIN = +3 dBm, Ids = 900 mA Typ. PIN = +3 dBm, Ids = 900 mA Typ. Units dB Ratio Ratio dBm dB dB dB mA V mA C/W dBc dBc V Min. 31 -- -- 31.7 -- -- -- 800 -2.0 -- -- -- -- -- Typ. 33 2.5:1 2.5:1 33.0 0.3 0.3 0.4 900 -1.2 10 7.0 -35 -45 4.0 Rev. V5 Electrical Specifications: TA =+25C, VDD = +8 V, VGG adjusted for IDD = 900 mA, F = 5.9 - 7.1 Max. 35 3.0:1 -- -- 0.75 0.75 -- 1000 -0.4 20 -- -- -- -- Absolute Maximum Ratings1,2,3 Parameter Input Power Operating Voltages Ids Channel Temperature Operating Temperature Storage Temperature Absolute Maximum +15 dBm VDD = +10 volts; VGG = -3 volts; VDD - VGG = 12 volts 1200 mA +150 C -40 C to +80 C -65 C to +150 C Operating the AM42-0039 The AM42-0039 is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply -2.0 Volts to VGG. 2. Ramp VDD to +8V. 3. Adjust VGG to set quiescent drain current . 4. Apply RF. 5. Power down in reverse sequence. Turn gate voltage off last. 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Adequate heat sinking and grounding required on flange base. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. AM42-0039 2 Watt C-Band VSAT Power Amplifier 5.9 - 7.1 GHz Lead-Free CR-15 Application Schematic 4,5,6 VDD 1 or 10 VDET Rev. V5 7 1.0 F RF In 3 AM42-0039 100 pF 0.01 F RF Out 8 100 pF 1.0 F Reference Application Note M538 for lead-free solder reflow recommendations. GND 2,4,9 VGG 5 or 6 4. Apply -2 volts to pin 5 or 6 (VGG), prior to applying +8 volts to pins 1 or 10 (VDD). Adjust VGG for typical drain current. 5. External DC blocking capacitors required on the RF ports. 6. For optimum IP3 performance, VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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